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MMDF1N05E, MVDF1N05E
Power MOSFET
2 A, 50 V, N ? Channel SO ? 8, Dual
These miniature surface mount MOSFETs feature ultra low R DS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain ? to ? source diode has a low reverse recovery time. These devices
are designed for use in low voltage, high speed switching applications
where power efficiency is important. Typical applications are dc ? dc
converters, and power management in portable and battery powered
products such as computers, printers, cellular and cordless phones.
They can also be used for low voltage motor controls in mass storage
products such as disk drives and tape drives. The avalanche energy is
specified to eliminate the guesswork in designs where inductive loads
are switched and offer additional safety margin against unexpected
voltage transients.
http://onsemi.com
2 AMPERE, 50 VOLTS
R DS(on) = 300 m W
N ? Channel
D
Features
? Ultra Low R DS(on) Provides Higher Efficiency and Extends Battery Life
? Logic Level Gate Drive ? Can Be Driven by Logic ICs
? Miniature SO ? 8 Surface Mount Package ? Saves Board Space
? Diode Is Characterized for Use In Bridge Circuits
? Diode Exhibits High Speed
? Avalanche Energy Specified
? Mounting Information for SO ? 8 Package Provided
? I DSS Specified at Elevated Temperature
? This is a Pb ? Free Device
? MVDF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC ? Q101
Qualified and PPAP Capable
8
1
G
S
MARKING
DIAGRAM
8
SO ? 8 F1N05
CASE 751 AYWW G
STYLE 11 G
1
F1N05 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating Symbol Value
Unit
G = Pb ? Free Package
(Note: Microdot may be in either location)
Drain ? to ? Source Voltage
V DS
50
V
PIN ASSIGNMENT
Gate ? to ? Source Voltage ? Continuous
Drain Current ? Continuous
Drain Current ? Pulsed
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 25 V, V GS = 10 V, I L = 2 Apk)
V GS
I D
I DM
E AS
± 20
2.0
10
300
V
A
mJ
Source ? 1
Gate ? 1
Source ? 2
Gate ? 2
1 8
2 7
3 6
4 5
Top View
Drain ? 1
Drain ? 1
Drain ? 2
Drain ? 2
Operating and Storage Temperature Range
T J , T stg
? 55 to 150
° C
Total Power Dissipation @ T A = 25 ° C
P D
2.0
W
ORDERING INFORMATION
Thermal Resistance, Junction ? to ? Ambient R q JA 62.5 ° C/W
(Note 1)
Maximum Temperature for Soldering, T L 260 ° C
Time in Solder Bath 10 Sec
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Mounted on 2 ″ square FR4 board (1 ″ sq. 2 oz. Cu 0.06 ″ thick single sided) with
one die operating, 10 sec. max.
Device Package Shipping ?
MMDF1N05ER2G SO ? 8 2,500/Tape & Reel
(Pb ? Free)
MVDF1N05ER2G SO ? 8 2,500/Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2012
December, 2012 ? Rev. 11
1
Publication Order Number:
MMDF1N05E/D
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